Capacitor structure and method of forming a capacitor structure

ABSTRACT

The present disclosure provides, in accordance with some illustrative embodiments, a capacitor structure comprising an active region formed in a semiconductor substrate, a MOSFET device comprising source and drain regions formed in the active region and a gate electrode formed above the active region, and a first electrode and a second electrode formed in a metallization layer above the MOSFET device, wherein the first electrode is electrically connected with the source and drain regions via respective source and drain contacts and the second electrode is electrically connected with the gate electrode via a gate contact.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a continuation-in-part of co-pending application Ser. No.14/816,337, filed on Aug. 3, 2015.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure generally relates to advanced FDSOI techniquesand, more particularly, to the fabrication of capacitor structures inadvanced FDSOI techniques.

2. Description of the Related Art

In the ongoing task to comply with constraints imposed by Moore's Law,FDSOI (“fully depleted silicon-on-isolator”) is currently favored as thebasis for next generation technologies in the fabrication ofsemiconductor devices at technology nodes of 22 nm and beyond. Asidefrom FDSOI allowing the combination of high performance and low powerconsumption, complemented by an excellent responsiveness to powermanagement design techniques, fabrication processes as employed in FDSOItechniques are comparatively simple and actually represent a low riskevolution of conventional planar bulk CMOS techniques when compared tothree-dimensional transistor designs, such as FinFETs.

In general, SOI techniques make use of a special kind of substrate beingformed by a semiconductor layer, such as silicon, germanium or silicongermanium, formed on a buried oxide (BOX) layer, which is in turn formedon a semiconductor substrate. Conventionally, there are two types of SOIdevices: PDSOI (partially depleted SOI) and FDSOI (fully depleted SOI)MOSFETs. For example, in an N-type PDSOI MOSFET, a P-type film issandwiched between a gate oxide (GOX) and the BOX, where a thickness ofthe P-type film is such that the depletion region cannot cover the wholeP-region. Therefore, to some extent, PDSOI devices may behave like bulkMOSFETs.

In FDSOI substrates, the thickness of the semiconductor layer is suchthat the depletion region covers the whole semiconductor layer. Herein,the GOX in FDSOI techniques supports fewer depletion charges than a bulksubstrate and an increase in the inversion charges occurs in the fullydepleted semiconductor layer, resulting in higher switching speeds.

In recent attempts to provide a simple way of meeting power/performancetargets, back biasing was suggested for FDSOI devices. When adopting theconcept of back biasing, a voltage is applied just under the BOX oftarget semiconductor devices. In doing so, the electrostatic control ofthe semiconductor device is changed and the threshold voltage is shiftedto either obtain more drive current (hence, higher performance) at theexpense of increased leakage current (forward back bias, FBB) or to cutleakage current at the expense of reduced performance. While back biasin planar FDSOI techniques is somewhat similar to body bias asimplemented in bulk CMOS technologies, it offers a number of keyadvantages in terms of level and efficiency of the bias that can beapplied. For example, back biasing can be utilized in a dynamic way on ablock-by-block basis. It can be used to boost performance during thelimited periods of time when maximum peak performance is required fromthat block. It can also be used to cut leakage during the periods oftime when limited performance is not an issue.

The effects of process and temperature variations may be reduced whenback biasing techniques are employed. As a result, the design ofcircuits including such devices becomes much easier by greatly reducingthe spread of performance that the designers have to address whendesigning a circuit. As back biasing further allows operation atconsistently lower (and more constant) supply voltages, the powerconsumption of FDSOI devices is also reduced and electromigration andpower density problems are eased.

The implementation of back bias in the setup of FDSOI techniquesinvolves a local exposure of the bulk substrate, so-called BULEX (‘bulkexposed’) regions, that are to be contacted. Naturally, the bulksubstrate has a height difference relative to an upper surface of theactive semiconductor layer of an SOI substrate. Accordingly, a stepheight exists between BULEX regions and SOI substrates in the form ofthe BOX layer and the active semiconductor layer. In advancedtechnologies, the step height may be on the order of 30 nm, which raisesbig challenges in front end of line (FEOL) processing of advancedsemiconductor devices. For example, the step height between the bulksemiconductor material (at the BULEX regions) and the upper surface ofthe active layer of an SOI substrate (at transistor devices) leads touncontrollable variations in the critical dimensions, to large offsetsbetween FDSOI and bulk structure critical dimensions and, particularly,in lithographical processes, to divots and crevices where film residuesare hard to remove and which can cause shorts and leaks in the finalcircuit.

One conventional fabrication process for forming BULEX contacts besidesSOI semiconductor devices will be explained with regard to FIGS. 1a-1dand 2a-2c below.

FIGS. 1a-1d schematically show, in a cross-sectional view, a known FEOLprocess for implementing a back bias contact via contacting a BULEX areabeside an active region according to SOI techniques. With regard to FIG.1a , a known SOI substrate region is schematically illustrated. Asindicated above, an SOI substrate is formed by a base substrate material101, on which a buried oxide (BOX) material 103, and an active siliconfilm 105 is provided.

Starting from the SOI substrate as schematically illustrated in FIG. 1a, a bulk exposed region 120 is formed adjacent to an SOI region 110 bytechniques implemented for locally removing the BOX material 103 and theactive silicon film 105, as shown in FIG. 1b . Herein, a mask pattern(not illustrated) may be formed via lithographical techniques, e.g., byforming a resist material (not illustrated) on a thin oxide liner 107(passivation oxide) provided on the active silicon film 105 andlithographically patterning the resist material (not illustrated) suchthat a region, where the BULEX region 120 is to be provided, is notcovered by the masking pattern (not illustrated). In removing the activesilicon film 105 and the BOX material 103 in accordance with the maskingpattern (not illustrated), a bulk exposed region 120 is locally formed.

Regarding FIG. 1c , a process of re-growing silicon material on theBULEX region 120 is preformed such that the step height between theBULEX region 120 and the active silicon film 105 in the SOI region 110is reduced. However, as the height level of the re-grown siliconmaterial 121 on the BULEX region 120 may not totally match the heightlevel of the active silicon film 105, the re-grown silicon material 121is overgrown and, as a consequence, a dislocation portion 123 is formedat the interface of the SOI region 110 and the BULEX region 120.

In order to avoid possible disadvantageous effects resulting from thedislocation 123, an STI region of sufficient width is formed at theinterface by matching a trench 125 with a width dimension d1 into theSOI material and the re-grown silicon material 121 at the interfacebetween the SOI region 110 and the BULEX region 120, as shown in FIG. 1d. Therefore, a separation between the BULEX region 120 and the SOIregion 110 has to be implemented in order to remove the dislocation 123,therefore leading to an increased distance between a BULEX contact (notillustrated), which is to be formed on the BULEX region 120, relative toa semiconductor device (not illustrated), which is to be formed on andin the SOI region 110 during subsequent fabrication steps.Conventionally, a width of the trench 125 is greater than a width ofnormally formed STI trenches 126, i.e., d1>d2.

With regard to FIGS. 2a-2c , issues appearing with the step heightdifference between BULEX regions and SOI regions are illustrated. FIG.2a schematically illustrates a semiconductor device structure at anearly stage during fabrication, particularly before any gate structureis formed and an STI region 207 is provided within an SOI substratestructure (base substrate 201, BOX material 203 and active silicon film205), where the STI structure 207 separates a first SOI region 210 and asecond SOI region 220. The first SOI region 210 and the second SOIregion 220 are herein covered by a thin oxide liner.

Subsequently, a BULEX region is formed in the second SOI region 220 bylocally removing the BOX material 203 and the active silicon film 205 inthe second SOI region 220. Accordingly, a step height h (see FIG. 2b )is provided between the BULEX region 220 and the SOI region 210. As theSTI 207 is partially exposed when the BOX material 203 and the activesilicon film 205 in the bulk exposed (BULEX) region 220 are removed, astep 230 is formed in the STI 207 resulting in a stepped STI structure207′.

Subsequent to providing the BULEX region 220, a gate structure 211 isformed on the SOI region 210, as shown in FIG. 2c . The gate structure211 is formed by depositing a gate dielectric material 215 and a gateelectrode material 213 over the SOI region 210 and the BULEX region 220,forming a gate mask pattern (not illustrated) on the deposited materialsand removing the deposited material in accordance with the gate maskpattern (not illustrated). After the gate stack 213, 215 is patterned,sidewall spacers 217 and the gate cap 219 are formed by depositing thespacer forming material and anisotropically etching the spacer formingmaterial.

As a result of the gate stack patterning (herein, the anisotropicetching of the gate material) and the spacer forming process (herein,the anisotropic etching of the spacer forming material), residualmaterial 232 of the gate stack and the spacer remains at the step 230 inthe stepped STI structure 207′. The residual material 232 leads to alarge BULEX-to-SOI distance and could possibly induce an undesiredconducting structure at the stepped STI structure 207′.

In view of the above-described situation, it is desirable to provide aBULEX contact in FDSOI techniques without the issues as discussed abovewith regard to FIGS. 1a -2 c.

In addition to the scaling of active semiconductor devices, such asMOSFETs, other components, such as passive devices, e.g., capacitors,inductors, resistors and the like, are increasingly integrated intointegrated circuits, thereby eliminating the need to incorporateseparate discrete components in a circuit design that otherwiseincreases circuit size, power consumption and cost. Both the demands ofsmaller circuit design rules, and the desire to incorporate variouspassive components in an integrated circuit, however, has led to furtherchallenges to overcome. For example, one type of passive component thatis increasingly incorporated into many integrated circuit designs is acapacitor. A capacitor may be implemented as a metal-insulator-metal(MIM) capacitor which is typically formed from a stacked arrangement ofmaterials that include top and bottom electrodes separated by anintermediate insulator layer incorporating a dielectric material in theoutermost metal layers in an integrated circuit (e.g., between the fifthand sixth metallization layers), thus relatively far from the underlyingsemiconductor substrate such that parasitic capacitance effects with thesubstrate are minimized. On the other hand, MIM capacitors are usuallyfabricated in back-end-of-line (BEoL) processing and thus occupy largeareas of integrated circuits.

Recently, silicon-insulator-silicon (SIS) capacitors are formed on SOIsubstrates in large scale integration. Upon scaling SIS capacitors, thecapacity of SIS capacitors decreases and the tendency for leakagecurrents to occur increases. However, to provide a desired capacitancefrom a SIS capacitor within a smaller circuit area, an increase in thecapacitance is actually required.

In view of the above situation, it is thus desirable to providecapacitor structures at advanced technology nodes with improvedcapacitance density.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

In a first aspect of the present disclosure, a capacitor structure isprovided. In accordance with some illustrative embodiments herein, thecapacitor structure includes an active region formed in a semiconductorsubstrate, a MOSFET device comprising source and drain regions formed inthe active region and a gate electrode formed above the active region,and a first electrode and a second electrode formed in a metallizationlayer above the MOSFET device, wherein the first electrode iselectrically connected with the source and drain regions via respectivesource and drain contacts and the second electrode is electricallyconnected with the gate electrode via a gate contact.

In accordance with a second aspect of the present disclosure, acapacitor structure is provided. In accordance with some illustrativeembodiments herein, the capacitor structure includes an active regionformed in a semiconductor substrate, a first MOSFET device comprisingfirst source and drain regions formed in the active region and a firstgate electrode formed above the active region, at least a second MOSFETdevice formed in juxtaposition with the first MOSFET device, the secondMOSFET device comprising second source and drain regions formed in theactive region and a second gate electrode formed above the activeregion, and a first electrode and a second electrode formed in ametallization layer above the first and second MOSFET devices, whereinthe first electrode is electrically connected with the first source anddrain regions and the second source and drain regions via respectivefirst source and drain contacts and second source and drain contacts,and wherein the second electrode is electrically connected with thefirst gate electrode and the second gate electrode via respective firstand second gate contacts.

In a third aspect of the present disclosure, a capacitor structure isprovided. In accordance with some illustrative embodiments herein, thecapacitor structure includes an SOI substrate having an activesemiconductor layer formed on a buried insulating material layer, whichis in turn formed on a base substrate, a MOSFET device comprising sourceand drain regions formed in the active semiconductor layer and a gateelectrode formed above the active semiconductor layer, a first electrodeand a second electrode formed in a metallization layer above the MOSFETdevice, and wherein the first electrode is electrically connected withthe source and drain regions via respective source and drain contacts,and the second electrode is electrically connected with the gateelectrode via a gate contact and with the base substrate via a bulkcontact extending through the active semiconductor layer.

In accordance with a fourth aspect of the present disclosure, a methodof forming a capacitor structure is provided. In accordance with someillustrative embodiments herein, the method includes forming an activeregion formed in a semiconductor substrate, and forming a MOSFET devicecomprising source and drain regions formed in the active region and agate electrode formed above the active region, forming an interlayerdielectric (ILD) layer above the MOSFET device, forming source and draincontacts electrically connected with the source and drain regions andforming a gate contact electrically connected with the gate electrode inthe ILD layer, and forming a metallization layer on the ILD layer, themetallization layer comprising a first electrode and a second electrode,the first electrode being electrically connected with the source anddrain contacts and the second electrode being electrically connectedwith the gate contact.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1a-1d schematically illustrate, in a cross-sectional view, afabrication process for forming a BULEX region in SOI techniques inaccordance with a first known technique;

FIGS. 2a-2c schematically illustrate, in a cross-sectional view, afabrication process for providing a BULEX region in SOI techniques inaccordance with a second known technique;

FIGS. 3a-3n schematically illustrate, in cross-sectional views, FEoLfabrication processes in accordance with some illustrative embodimentsof the present disclosure;

FIGS. 4a-4k schematically illustrate, in cross-sectional views, FEoLfabrication processes in accordance with other illustrative embodimentsof the present disclosure; and

FIG. 5 schematically shows a top view of a metallization layer inaccordance with some illustrative embodiments of the present disclosure.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The present disclosure will now be described with reference to theattached figures. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details which arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary or customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definitionshall be expressively set forth in the specification in a definitionalmanner that directly and unequivocally provides the special definitionfor the term or phrase.

The present disclosure shows, in accordance with some illustrativeembodiments of the present disclosure, the fabrication of semiconductordevices, such as MOSFET or MOS devices, integrated on a chip. Whenreferring to MOS devices, the person skilled in the art will appreciatethat, although the expression “MOS device” is used, no limitation to ametal-containing gate material and/or to an oxide-containing gatedielectric material is intended.

Semiconductor devices of the present disclosure may concern deviceswhich may be fabricated by using advanced technologies, i.e., thesemiconductor devices may be fabricated by technologies applied toapproach technology nodes smaller than 100 nm, for example, smaller than50 nm or smaller than 35 nm, e.g., at 28 nm or below. After a completereading of the present application, a person skilled in the art willappreciate that, according to the present disclosure, ground rulessmaller or equal to 45 nm, e.g., at 28 nm or below, may be imposed. Thepresent disclosure proposes semiconductor devices that may havestructures of minimal length dimensions and/or width dimensions smallerthan 100 nm, for example, smaller than 50 nm or smaller than 35 nm orsmaller than 28 nm. For example, the present disclosure may providesemiconductor devices fabricated by using 45 nm technologies or below,e.g., 28 nm or even below.

The semiconductor devices disclosed herein may be fabricated asP-channel MOS transistors or PMOS transistors and N-channel transistorsor NMOS transistors; both types of transistors may be fabricated with orwithout mobility-enhancing stressor features or strain-inducingfeatures. It is noted that a circuit designer can mix and match devicetypes, using PMOS and NMOS devices, stressed and unstressed, to takeadvantage of the best characteristics of each device type as they bestsuit the semiconductor device under design.

In general, SOI devices have an active semiconductor layer disposed on aburied insulating material layer, which, in turn, is formed on a basesubstrate material. In accordance with some illustrative embodimentsherein, the active semiconductor layer may comprise one of silicon,germanium, silicon germanium and the like. The buried insulatingmaterial layer may comprise an insulating material, e.g., silicon oxideor silicon nitride. The base substrate material may be a base materialthat may be used as a substrate as known in the art, e.g., silicon andthe like. In accordance with illustrative embodiments employing FDSOIsubstrates disclosed herein, the active semiconductor layer may have athickness of about 20 nm or less, while the buried insulating materiallayer may have a thickness of about 145 nm or, in accordance withadvanced techniques, the buried insulating material layer may have athickness in a range from about 10 to about 30 nm. For example, in somespecial illustrative embodiments of the present disclosure, the activesemiconductor layer may have a thickness of about 3 to about 10 nm.

As to a crystalline plane orientation of the base substrate material,similar to that of an ordinary silicon device, an SOI substrate whosesurface is a face (100) may be used. However, in order to improve theperformance of a PMOS semiconductor device, a surface of the PMOSsemiconductor device may be used as a face (110). Alternatively, ahybrid plane orientation substrate whose surface may be mixed by a face(100) and a face (110) may be used. In alternative embodiments, the basesubstrate material may be of an N-type when N-accumulation and/orN-inversion devices are considered (otherwise P-type for P-accumulationand/or P-inversion).

In accordance with one illustrative embodiment of the presentdisclosure, as described above, a semiconductor device may be formed byproviding an SOI substrate with an active semiconductor layer disposedon a buried insulating material layer, which is in turn formed on a basesubstrate material, forming a gate structure above the activesemiconductor layer in an active region of the SOI substrate, partiallyexposing the base substrate for forming at least one bulk exposed regionafter the gate structure is formed, and forming a contact structure forcontacting the at least one bulk exposed region. In accordance with someillustrative embodiments herein, a well implantation process may beperformed prior to forming the contact structure for implanting dopantsinto the bulk exposed region so as to form bulk well regions. Inaccordance with yet another example disclosed herein, an STI structuremay be further provided in the SOI substrate prior to forming the gatestructure and forming two bulk exposed regions, wherein the bulk exposedregions and the active region are separated by the STI structure. Forexample, a diode structure may be formed upon forming a contactstructure contacting the bulk exposed regions.

In accordance with some illustrative embodiments disclosed herein, awell implantation process may be performed prior to forming the contactstructure for implanting dopants into the bulk exposed region so as toform bulk well regions, wherein the bulk exposed region is provided inthe active region and a silicide contact is formed in the bulk wellregions. The silicide contact may be subsequently contacted by thecontact structure for forming a back bias contact for the gatestructure. In accordance with one illustrative embodiment, raisedsource/drain regions (RSD) may be formed adjacent to the gate structurein the active region before exposing the base substrate, wherein thebulk exposed region is formed by etching a trench into the RSD region atone side of the gate structure so as to expose the bulk substrate in thetrench.

In accordance with other illustrative embodiments, germanium may beimplanted into the active semiconductor layer of the active region forforming a silicon-germanium region in the active semiconductor layerprior to forming the gate structure.

In accordance with yet other illustrative embodiments, the basesubstrate may be exposed by etching a trench into the activesemiconductor layer and the buried insulating material layer. In oneillustrative embodiment depicted herein, the contact structure may beformed by forming a PEN liner in the trench and depositing a contactmaterial in the trench in alignment with the PEN liner. For example, asilicide region may be formed in the bulk exposed region, before the PENliner is formed.

In accordance with yet another illustrative embodiment of the presentdisclosure, as described above, a semiconductor device may be formed byproviding an SOT substrate with an active semiconductor layer disposedon a buried insulating material layer, which is in turn formed on a basesubstrate material, forming an STI structure separating a first SOTregion and a second SOT region, forming a gate structure on the activesemiconductor layer in the first SOT region, and forming a diodestructure in the second SOT region after the gate structure is formed.

In accordance with some illustrative embodiments, the diode structuremay be formed by etching a first trench and a second trench into thesecond SOT region, wherein each trench exposes the base substrate suchthat a first bulk exposed region and a second bulk exposed region areprovided in the second SOI region, implanting well regions into thefirst and second bulk exposed regions for forming bulk well regions, andforming a contact structure contacting the bulk well regions.

In accordance with still other illustrative embodiments, the bulksubstrate may be partially exposed in the first SOI region at one sideof the gate structure and the exposed bulk region in the first SOIregion may be contacted for forming a back bias contact for the gatestructure in the first SOI region. In one illustrative embodimentherein, a raised source/drain region may be formed at both sides of thegate structure, before the bulk exposed regions are formed in the firstand second SOI regions, and the raised source/drain region may beremoved at the one side of the gate structure, when the exposed bulkregion is formed in the first region. For example, the raisedsource/drain region may be removed by etching a trench into the raisedsource/drain region at the one side of the gate structure, followed byforming a PEN liner in the trench and depositing a contact material inthe trench in alignment with the PEN liner for forming a back biascontact in the trench.

In accordance with yet another embodiment of the present disclosure, asdescribed above, a semiconductor device may be formed by providing anSOI substrate with an active semiconductor layer disposed on a buriedinsulating material layer, which is in turn formed on a base substratematerial, forming an STI structure separating a first SOI region and asecond SOI region, forming a gate structure on the active semiconductorlayer in the first SOI region, and partially exposing the bulk substratein the first SOI region at one side of the gate structure and contactingthe exposed bulk region in the first SOI region for forming a back biascontact for the gate structure in the first SOI region.

In accordance with some illustrative embodiments, a raised source/drainregion may be formed at both sides of the gate structure on the firstSOI region prior to forming the bulk exposed regions, and the raisedsource/drain region may be partially removed at the one side of the gatestructure, when the exposed bulk region is formed in the first region.In one illustrative embodiment herein, the raised source/drain regionmay be removed by etching a trench into the raised source/drain regionat the one side of the gate structure, followed by forming a PEN linerin the trench and depositing a contact material in the trench inalignment with the PEN liner for forming a back bias contact in thetrench.

In accordance with some illustrative embodiments, a diode structure maybe formed in the second SOI region by etching a first trench and asecond trench into the second SOI region, each trench exposing the basesubstrate such that a first bulk exposed region and a second bulkexposed region are provided in the second SOI region, implanting wellregions into the first and second bulk exposed regions for forming bulkwell regions, and forming a contact structure contacting the bulk wellregions.

With regard to FIGS. 3a-3n , the fabrication of a semiconductor devicestructure in FEoL processing will be described below.

FIG. 3a schematically illustrates a semiconductor device structure at anearly stage during fabrication, particularly at a stage when an SOIsubstrate is provided. The SOI substrate is formed by an activesemiconductor layer 305 provided on a buried insulating material layer303, which is, in turn, disposed on a base semiconductor material 301.In accordance with some illustrative examples of the present disclosure,the active semiconductor layer 305 may be a semiconductor material suchas silicon, silicon germanium, or the like. Furthermore, the buriedinsulating material layer 303 may be provided by an oxide material or anitride material. The base substrate material 301 may be formed bysilicon or any other appropriate semiconductor material. In accordancewith some illustrative examples, the active semiconductor material 305may have a thickness in a range from about 3-10 nm, while the buriedinsulating material 303 may have a thickness in a range from about 10-30nm, or in a range from about 130-160 nm, e.g., at about 149 nm.

In accordance with some illustrative embodiments, the base semiconductormaterial 301 may be doped or undoped. For example, the basesemiconductor material 301 may be P-doped or N-doped.

FIG. 3b schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after a silicongermanium region 307 is provided in the active semiconductor layer 305,and a thin oxide layer 309 is formed over the semiconductor devicestructure.

In accordance with illustrative embodiments of the present disclosure,the silicon germanium region 307 may be provided by locally removing theactive semiconductor layer 305, e.g., by means of an appropriate maskingpattern (not illustrated), and epitaxially growing silicon germaniummaterial in accordance with the masking pattern. Alternatively, agermanium layer may be formed on a portion of the active semiconductormaterial layer 305 and germanium material is subsequently diffused intothe active semiconductor material layer 305 below the germanium layer bymeans of an appropriate annealing process. Still alternatively,germanium material may be implanted into the silicon germanium region307 by means of an appropriate masking pattern (not illustrated).

With regard to FIG. 3c , the semiconductor device structure isschematically illustrated at a more advanced stage during fabrication,particularly during a fabrication process for forming STI structures. Atthe stage illustrated in FIG. 3c , trenches 310 defining and separatingSOI regions A, B and C are etched into the SOI substrate in accordancewith appropriate masking patterns (not illustrated). The trenches 310are etched into the active semiconductor material 305 and the buriedinsulating material 303 so as to stop at an upper surface region of thebase substrate material 301. Subsequently, a thin oxide liner 315 may bedeposited over the semiconductor device structure.

In accordance with some illustrative embodiments of the presentdisclosure, the trenches 310 may be formed by depositing a pad oxide 311and a nitride material 313 on the semiconductor device structure asillustrated in FIG. 3b , followed by a resist material (not illustrated)which is then subjected to a lithographical process for patterning theresist material (not illustrated). In selectively etching the nitridematerial, oxide material, material of the active semiconductor materiallayer 305, and the buried insulating material layer 303 in one or moreetching steps, the trenches 310 are formed. Afterwards, the resistmaterial is removed and a passivating oxide liner 315 is formed.

With regard to FIG. 3d , the semiconductor device structure isschematically illustrated at a more advanced stage during fabrication,particularly after a deep STI structure 310′ is formed in addition tothe shallow STI structure 310 and the trenches are filled, followed by apolishing process, e.g., CMP, removing the layers 311 to 315 andexposing upper surfaces of the active semiconductor material layer 305in the SOI regions A, B and C.

FIG. 3e schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after gatematerials 320, e.g., gate dielectric material 322 and gate electrodematerial 324, are deposited over the SOI regions A, B and C. Inaccordance with some illustrative embodiments of the present disclosure,at least one of a silicon oxide material and a high-k material (e.g.,hafnium oxide and the like) is deposited when depositing the gatedielectric material 322, followed by depositing one of amorphoussilicon, polysilicon and an appropriate gate electrode metal as the gateelectrode material 324.

Next, a masking structure is formed over the semiconductor devicestructure, e.g., a hard mask formed by a nitride, oxide, ornitride/oxide stack material 331 and a patterned resist material 333.After performing a gate structuring process 334 by anisotropicallyetching the deposited gate material 320 via the masking pattern 331,333, gate structures 340, 350 (schematically illustrated in FIG. 30 areformed in the SOI regions B and C. The person skilled in the art willappreciate that the gate structures 340, 350 are obtained after spacerstructures 345, 355 are formed at the respective gate stacks 341, 343and 351, 353. Particularly, the gate stacks 341, 343 and 351, 353 areformed, when the process 334 is completed and the mask 331, 333 isremoved.

Next, after completing the process 334, a spacer forming material layer(not illustrated) is deposited over the semiconductor device structure,e.g., by blanket-deposition processes, and an anisotropic etchingprocess (not illustrated) is performed for anisotropically etching thespacer forming material layer (not illustrated) such that sidewallspacers covering sidewalls of the gate stacks 341, 343 and 351, 353 areformed. After formation of a gate cap, the spacer structure 345 and 355(illustrated in FIG. 3f ) are obtained.

FIG. 3g schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after asemiconductor material is grown on exposed surfaces of the activesemiconductor material layer 305 and 307, respectively, such that agrown semiconductor material 361 is formed on the active semiconductormaterial layer 305 in the SOI region A, and raised source/drain regions362, 363 are provided adjacent to the gate structures 340, 350 in theSOI regions B, C. The grown material 361 is optional and may be omittedin alternative embodiments of the present disclosure.

FIG. 3h schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after a sidewallspacer extension structure 347, 357 is formed at an upper portion of thegate structures 340, 350, which upper portion is not covered by theraised source/drain regions 362, 363, and after the gate cap is removedto expose an upper surface of the gate electrode materials 341, 351 ofthe gate structures 340, 350.

In accordance with some illustrative embodiments of the presentdisclosure, one of an oxide material and a nitride material may bedeposited over the semiconductor device structure and anisotropicallyetched in accordance with spacer etching techniques to form the sidewallspacer extension structures 347, 357 and to expose an upper surface ofthe gate electrode material 341, 351. In accordance with some specialillustrative examples herein, an etching process for opening the gatestructures to expose upper surfaces of the gate electrode material 341,351 may be performed, followed by the deposition of material for formingthe sidewall spacer extension portions 347, 357.

FIG. 3i schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after aninsulating material layer 367, e.g., one of an oxide material and anitride material, is deposited, followed by the formation of a patternmask structure 370 covering the SOI region C and partially covering theSOI regions A and B.

FIG. 3j schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after an etchingprocess through the masking pattern 370 is completed and the maskingpattern 370 is removed. As a result of the etching process, trenches371, 373 are formed in the SOI region A, the trenches 371 and 373 beingseparated by an SOI portion 372 and the trenches 371, 373 partiallyexposing an upper surface of the base substrate material 301 in the SOIregion A.

Furthermore, a trench 375 is formed in the SOI region B at one side ofthe gate structure 340, the trench 375 partially exposing an uppersurface of the base substrate material 301 in the SOI region B. Theperson skilled in the art will appreciate that a distance between thetrench 375 and the gate structure 340 is adjusted such that there isstill enough landing space for a contact to the raised source/drainregion 362 in between the trench 375 and the gate structure 340. Afterthe trenches 371, 373 and 375 are formed, an implantation process may beperformed in order to form bulk well regions 377, 379 and 381 in thebase substrate material 301 at the bottom of the trenches 371, 373 and375.

In accordance with some illustrative embodiments of the presentdisclosure, one of the wells 377 and 379, together with the bulk wellregion 381, is doped with dopants of the same conductivity type as thesurrounding base substrate material. The other of the bulk well regions377, 379 are doped with dopants of an opposite conductivity type to thesurrounding conductivity of the base substrate material. For example, ifthe surrounding base substrate material is lightly P-doped, one of thebulk well regions 377 and 379, e.g., the bulk well region 379, togetherwith the bulk well region 381 may be strongly P-doped, while the otherof the bulk well regions 377, 379, e.g., the bulk well region 377, maybe strongly N-doped. The person skilled in the art will appreciate thatthis does not pose any limitations on the present disclosure and otherconductivity types and/or configurations may be applied. However, whenusing bulk well regions 377 and 379 of opposite conductivity types, adiode structure may be provided when contacting the bulk well regions377 and 379 in the SOI region A.

FIG. 3k schematically illustrates the semiconductor device structure ata more advanced stage during fabrication, particularly after thetrenches 371, 373 and 375 in the SOI regions A and B are covered by amasking structure 383, while the remaining portion of the SOI region Band the SOI region C are exposed to further processing. Upon exposingthe semiconductor device structure as illustrated in FIG. 3k to ananisotropic etching process, the semiconductor device structure asillustrated in FIG. 3l is obtained after the anisotropic etching processis completed and the masking pattern 383 is removed. With regard to FIG.3l , upper surface regions 391, 393 and 395 of the raised source/drainregions 362, 363 are exposed and a separation between the upper surfaceregions 391, 393 and 395 to the gate structures 340, 350 is furtheradjusted by further additional spacer elements 385 and 387.

With regard to FIG. 3m , the semiconductor device structure isschematically illustrated at a more advanced stage during fabrication,particularly after a silicidation process is performed for formingsilicide regions 383 which are formed at the bottom of the trenches 371,373 and 375 and on the upper surface regions of the raised source/drainregion 362, 363 and exposed upper surfaces of the gate electrodematerial 341, 351. Silicidation processes are well known in the art andcomprise depositing a metal material, subjecting the metal material toan annealing step for forming silicide material and removing theun-reacted metal by known etch chemistries.

With regard to FIG. 3n , the semiconductor device structure isschematically illustrated at a more advanced stage during fabrication,particularly after a plasma-enhanced nitride (PEN) material 385, e.g.,TPEN/CPEN (tensile PEN/compressive PEN), a contact dielectric 386, e.g.,a high-k material in the case of the MOSFET being formed from the gatestructure 340 (and/or the MOSFET being formed from the gate structure350) is (are) to implement one (or more) SIS capacitor(s) or a low-kmaterial, and contact structures 387, 389, 391, 393, 395 and 397 areformed. The contact structure 387 comprises two contacts contacting thesilicide region 383 on the bulk well regions 377, 379 in the SOI regionA for providing a diode structure between the contacts 387.

The contact structure 389 contacts the silicide region 383 on the bulkwell region 381 for providing a back bias contact to the gate structure340 in the SOI region B. The contacts 391 represent source/draincontacts, while the contact 393 contacts the gate structure 340. Withregard to the SOI region C, the contact 395 is a source/drain contact,while the contact 397 is contacting the gate structure 350. The contactstructures may comprise contact liners, e.g., TiN, and contact material,such as tungsten.

The semiconductor device structure as fabricated in accordance with theprocess described above with regard to FIGS. 3a-3n provides PEN linersthat allow for contact self-alignment in contact holes. Furthermore, noepi re-growth of BULEX material is performed. Therefore, issues asdiscussed above with regard to FIGS. 1a-1d are not arising. Of course,if desired, standard BULEX (before gate) may be used on the same chipfor making other passive devices like resistors, DCAPs, etc.

Although raised source/drain regions are described above in the variousillustrative embodiments of the present disclosure, the raisedsource/drain regions are optional and may also be omitted.

As no complete exposure of bulk material is performed in a completeactive region, e.g., one of the regions A, B and C, no topography issuesas discussed above with regard to FIGS. 2a-2c arise.

In some aspects of the present disclosure, a method of forming asemiconductor device is provided. In accordance with some illustrativeembodiments herein, the method may include providing an SOI substratewith an active semiconductor layer disposed on a buried insulatingmaterial layer, which may in turn be formed on a base substratematerial, forming a gate structure on the active semiconductor layer inan active region of the SOI substrate, partially exposing the basesubstrate for forming at least one bulk exposed region after the gatestructure is formed, and forming a contact structure for contacting theat least one bulk exposed region.

In accordance with some further aspects of the present disclosure, amethod of forming a semiconductor device is provided. In accordance withsome illustrative embodiments herein, the method may include providingan SOI substrate with an active semiconductor layer disposed on a buriedinsulating material layer, which may in turn be formed on a basesubstrate material, forming an STI structure separating a first SOIregion and a second SOI region, forming a gate structure on the activesemiconductor layer in the first SOI region, and forming a diodestructure in the second SOI region after the gate structure is formed.

In still further aspects of the present disclosure, a method of forminga semiconductor device is provided. In accordance with some illustrativeembodiments herein, the method may include providing an SOI substratewith an active semiconductor layer disposed on a buried insulatingmaterial layer, which may in turn be formed on a base substratematerial, forming an STI structure separating a first SOI region and asecond SOI region, forming a gate structure on the active semiconductorlayer in the first SOI region, and partially exposing the bulk substratein the first SOI region at one side of the gate structure and contactingthe exposed bulk region in the first SOI region for forming a back biascontact for the gate structure in the first SOI region.

In accordance with the present disclosure, a smaller distance betweenback bias contact and semiconductor device contacts are achieved.Furthermore, back bias bulk contact and the implementation of diodestructures in the bulk are possible at the same time in some of theabove described illustrative embodiments.

Summarizing some of the aspects of the fabrication of semiconductordevice structures as described above with regard to FIGS. 3a-3n ,fabrication processes may be employed, where gate patterning processesare performed and FDSOI MOSFET formation is applied before steps workingon BULEX areas are employed. Particularly, STI/RX patterning, gate stackformation and gate stack patterning, spacer formation, formation ofraised source/drain regions, spacer/implant steps and gate nitride capremoval is performed, before a BULEX area is patterned via an additionalmasking pattern. After a complete reading of the present application, aperson skilled in the art will appreciate that appropriate N- andP-masks and implant steps may be subjected to the bulk structures inorder to implement appropriate diode and back bias configurations. Afterthe BULEX working steps, the fabrication process is continued bysilicidation techniques, TPEN, CPEN deposition, contact formation andthe like.

The semiconductor device structure as described above with regard toFIGS. 3a-3n may be subjected to further processing in order to provide acapacitor structure. In accordance with some illustrative embodimentsherein, the process may be continued subsequent to the processing asdescribed above with regard to FIG. 3n by forming a metallization layerover the layer 386. The metallization layer may be implemented asdescribed below with regard to FIGS. 4k and 5. Particularly, themetallization layer (not illustrated in FIG. 3n ) may comprise a firstelectrode and a second electrode, the first electrode being electricallycoupled to the source/drain contacts 391 and/or the source/draincontacts 395 and the second electrode being electrically coupled to thegate contact 393 and/or the gate contact 397. Optionally, the secondelectrode may further be electrically coupled to the back bias contact389 which is connected to the base substrate 301 below the gatestructures 340 and 350. Accordingly, a capacitor structure comprising atleast one MOSFET device formed by the gate structures 340 and 350 withrespective source/drain regions and the first and second electrodes,optionally with the back bias contact, may be provided.

With regard to FIGS. 4a-4k , the fabrication of a capacitor structure inaccordance with some illustrative embodiments of the present disclosurewill be described below.

FIG. 4a schematically illustrates a semiconductor device structure at anearly stage during fabrication, particularly at a stage when an SOIsubstrate is provided. The SOI substrate is formed by an activesemiconductor layer 405 provided on a buried insulating material layer403, which is, in turn, disposed on a base semiconductor material 401.In accordance with some illustrative examples of the present disclosure,the active semiconductor layer 405 may be a semiconductor material suchas silicon, silicon germanium, or the like. Furthermore, the buriedinsulating material layer 403 may be provided by an oxide material or anitride material. The base substrate material 401 may be formed bysilicon or any other appropriate semiconductor material. In accordancewith some illustrative examples, the active semiconductor material 405may have a thickness in a range from about 3-10 nm, while the buriedinsulating material 403 may have a thickness in a range from about 10-40nm, e.g., from about 10-30 nm, or in a range from about 130-160 nm,e.g., at about 149 nm.

In accordance with some illustrative embodiments, the base semiconductormaterial 401 may be doped or undoped. For example, the basesemiconductor material 401 may be P-doped or N-doped.

In accordance with some alternative embodiments, a silicon germaniumregion similar to the silicon germanium region 307 (see FIG. 3b above)may be formed in the active semiconductor layer 405 in accordance withthe process as described above with regard to FIG. 3 b.

With regard to FIG. 4b , the semiconductor device structure isschematically illustrated at a more advanced stage during fabrication,while a fabrication process for forming STI structures is performed. Atthe stage illustrated in FIG. 4b , trenches 410 defining and separatingactive regions D and E are etched into the SOT substrate in accordancewith appropriate masking patterns (not illustrated). The trenches 410may be etched into the active semiconductor material 405 and the buriedinsulating material 403 so as to stop at an upper surface region of thebase substrate material 401. Subsequently, a thin oxide liner 415 may bedeposited over the semiconductor device structure.

In accordance with some illustrative embodiments of the presentdisclosure, the trenches 410 may be formed by depositing a pad oxide 411and a nitride material 413 on the semiconductor device structure asillustrated in FIG. 4a , followed by a resist material (not illustrated)which is then subjected to a lithographical process for patterning theresist material (not illustrated). In selectively etching the nitridematerial, oxide material, material of the active semiconductor materiallayer 405, and the buried insulating material layer 403 in one or moreetching steps, the trenches 410 may be formed. Afterwards, the resistmaterial may be removed and a passivating oxide liner 415 may be formed.

With regard to FIG. 4c , the semiconductor device structure isschematically illustrated at a more advanced stage during fabricationafter a trench isolation structure 410′ is formed by filling thetrenches 410, followed by a polishing process, e.g., CMP, during whichthe layers 411 to 415 may be removed and upper surfaces of the activesemiconductor material layer 405 may be exposed at least in the activeregions D and E.

FIG. 4d schematically illustrates the semiconductor device structure ata more advanced stage during fabrication after gate materials 420, e.g.,a gate dielectric material 422 and a gate electrode material 424, aredeposited over the active regions D and E. In accordance with someillustrative embodiments of the present disclosure, at least one of asilicon oxide material and a high-k material (e.g., hafnium oxide andthe like) may be deposited when depositing the gate dielectric material422 (optionally including a work function adjusting material, notillustrated, as known in the art), followed by depositing one ofamorphous silicon, polysilicon and an appropriate gate electrode metalas the gate electrode material 424.

Next, a masking structure may be formed over the semiconductor devicestructure, e.g., a hard mask formed by a nitride, oxide, ornitride/oxide stack material 431 and a patterned resist material 433.After performing a gate structuring process 434 by anisotropicallyetching the deposited gate material 420 via the masking pattern 431,433, gate structures 440, 450 (schematically illustrated in FIG. 4e )are formed above the active region E (according gate structures may beformed in the active region D and/or in any adjacent active region aswell, although this is not illustrated in the schematic illustration ofthe FIGS. 4d-4n ). The person skilled in the art will appreciate thatthe gate structures 440 and 450 are obtained after spacer structures445, 455 are formed at the respective gate stacks 441, 443 and 451, 453.In accordance with some illustrative examples herein, the gate stacks441, 443 and 451, 453 may be formed, when the process 434 is completedand the mask 431, 433 is removed.

For example, the process 434 may further comprise the steps ofdepositing a spacer forming material layer (not illustrated) over thesemiconductor device structure, e.g., via a blanket-deposition process,and performing an anisotropic etching process (not illustrated) so as toanisotropically etch the spacer forming material layer (notillustrated), wherein sidewall spacers covering sidewalls of the gatestacks 441, 443 and 451, 453 may be formed. After forming of a gate cap,the spacer structure 445 and 455 (illustrated in FIG. 4e ) may beobtained.

FIG. 4f schematically illustrates the semiconductor device structure ata more advanced stage during fabrication after a semiconductor materialis grown on exposed surfaces of the active semiconductor material layer405 such that a grown semiconductor material 461 may be formed on theactive semiconductor material layer 405 in the active region D andraised source/drain regions 462, 463 may be provided adjacent to thegate structures 440, 450 in the active region E. The grown material 461is optional and, in accordance with alternative embodiments of thepresent disclosure, the grown material 461 may be omitted.

At this stage during fabrication, the process may optionally becontinued as described above with regard to FIG. 3h , where a sidewallspacer extension structure 347, 357 is formed at an upper portion of thegate structures 340, 350.

FIG. 4g schematically illustrates the semiconductor device structure ata more advanced stage during fabrication after gate caps of the gatestructures 440 and 450 are removed and an insulating material layer 467,e.g., one of an oxide material and a nitride material, is deposited,followed by the formation of a pattern mask structure 470 partiallycovering the active regions D and E, leaving surface regions of theregions 461, 462 and 463 uncovered at locations where contacts to thebase substrate material 401 are to be formed.

FIG. 4h schematically illustrates the semiconductor device structure ata more advanced stage during fabrication after an etching processthrough the masking pattern 470 (FIG. 4g ) is completed and the maskingpattern 470 is removed. As a result of the etching process, trenches471, 473 and 475 may be formed in the active regions D and E. Forexample, the trenches 471 and 475 may be formed in the active region E,while trench 473 is formed in the active region D. In accordance withsome illustrative embodiments, the trenches 471 and 475 may be separatedby at least one MOS device formed in between, such as the MOS devicecomprising the gate structure 440. The person skilled in the art willappreciate that at least the active region E may comprise at least twoMOS devices and at least two trenches formed therein, said MOS devicesbeing separated by an SOI portion and the trenches 471, 473 partiallyexposing an upper surface of the base substrate material 401.

In accordance with some illustrative embodiments, each of the trenches471, 473 and 475 may be formed at one side of a gate structure (440 incase of the trenches 471 and 475, 450 in case of the trench 471) and maypartially expose upper surface regions 479, 480 and 481 of the basesubstrate material 401. The person skilled in the art will appreciatethat a distance between each of the trenches 471, 473 and 475 and theadjacent gate structure(s) is adjusted such that there is still enoughlanding space for a contact to the raised source/drain regions 462, 463to land, e.g., in between the trench 475 and the gate structure 440.

In accordance with some illustrative embodiments of the presentdisclosure, an (optional) implantation process may be performed, afterthe trenches 471, 473 and 475 are formed, in order to form bulk wellregions (not illustrated) in the base substrate material 401 at thebottom of the trenches 471, 473 and 475. In accordance with someillustrative examples herein, one of the accordingly formed wells (notillustrated) may be doped with dopants of the same conductivity type asthe surrounding base substrate material, while the other ones of thebulk well regions may be doped with dopants of an opposite conductivitytype to the surrounding conductivity of the base substrate material. Forexample, if the surrounding base substrate material 401 may be lightlyP-doped, one of the bulk well regions may be strongly P-doped, while theother ones of the bulk well regions may be strongly N-doped. The personskilled in the art will appreciate that this does not pose anylimitations on the present disclosure and other conductivity typesand/or configurations may be applied, such all the well regions may bedoped by dopants of the same conductivity type as the surrounding basesubstrate 401. However, when using bulk well regions of oppositeconductivity types, a diode structure may be provided in the basesubstrate 401.

With regard to FIG. 4i , the semiconductor device structure isschematically illustrated at a more advanced stage during fabricationafter upper surfaces of the gate structures 440, 450 are exposed byremoving the gate caps from the gate structures 440 and 450 and after asilicidation process is performed. In the silicidation process, silicideregions 483 are formed at the bottom of the trenches 471, 473 and 475and on the upper surface regions of the raised source/drain region 462,463 and exposed upper surfaces of the gate structures 440 and 450.Silicidation processes are well known in the art and comprise depositinga metal material, subjecting the metal material to an annealing step forforming silicide material and removing the un-reacted metal by knownetch chemistries.

With regard to FIG. 4j , the semiconductor device structure isschematically illustrated at a more advanced stage during fabricationafter an interlayer dielectric ILD, e.g., a high-k material in the caseof the MOSFET being formed from the gate structure 440 (and/or theMOSFET being formed from the gate structure 450) is (are) to implementone (or more) SIS capacitor(s) or a low-k material, and contactstructures or contacts CB1, CB2, CSD1, CSD2, CSD3, CSD4, CG1 and CG2 areformed. The bulk contacts CB1 and CB2 contact the silicide regions 483formed on upper surface regions of the base substrate 401. The contactsCSD1 and CSD2 contact the silicide regions 483 on the epi regionsadjacent to the gate structure 440, while the contact CG1 contacts thegate structure 440. The contacts CSD3 and CSD4 contact the silicideregions 483 on the epi regions adjacent to the gate structure 450, whilethe contact CG2 contacts the gate structure 450. The person skilled inthe art will appreciate that, although it is not explicitly shown, anoptional plasma-enhanced nitride (PEN) material, e.g., TPEN/CPEN(tensile PEN/compressive PEN) may be deposited over the active regions Dand E before the ILD is formed above the active regions D and E. Inaccordance with some illustrative embodiments, the contacts may comprisecontact liners formed from, e.g., TiN, and a contact material, such astungsten.

Although raised source/drain regions are described above in the variousillustrative embodiments of the present disclosure, the raisedsource/drain regions are optional and may also be omitted.

The person skilled in the art will appreciate that, as no completeexposure of bulk material is performed in a complete active region,e.g., one of the regions D and E, no topography issues as discussedabove with regard to FIGS. 2a-2c may arise.

The semiconductor device structure as described above with regard toFIGS. 4a-4j may be subjected to further processing in order to provide acapacitor structure. In accordance with some illustrative embodimentsherein, the process may be continued subsequent to the processing asdescribed above with regard to FIG. 4j by forming a metallization layerover the ILD.

FIG. 4k schematically illustrates the semiconductor device structure ofFIG. 4j at a more advanced stage during fabrication after ametallization layer M1 is formed above the ILD. In accordance with someillustrative embodiments herein, the metallization layer M1 may be thefirst metallization layer that is directly formed on the ILD.Alternatively, one or more metallization layers (not illustrated) may beformed between the ILD and the metallization layer M1. FIG. 5 shows atop view of an exemplary implementation of the metallization layer M1.

As illustrated in the FIGS. 4k and 5, the metallization layer M1comprises a first electrode E1 and a second electrode E2. The firstelectrode E1 and the second electrode E2 each comprise a plurality ofmetal bus lines MB1 to MB8 which are electrically connected torespective contacts CB1, CB2, CSD1, CSD2, CSD3, CSD4, CG1 and CG2.

In accordance with some illustrative embodiments of the presentdisclosure, the first electrode E1 may be electrically coupled to thesource/drain contacts CSD1, CSD2 via the lines MB2, MB4 and/or thesource/drain contacts CSD3, CSD4 via the lines MB6, MB8, and the secondelectrode E2 may be electrically coupled to the gate contact CG1 via theline MB3 and/or the gate contact CG2 via the line MB7. Optionally, thesecond electrode may further be electrically coupled to the bulk contactCB1 via the line MB1 and/or CB2 via the line MB5. Accordingly, acapacitor structure comprising at least one MOSFET device formed by thegate structures 440 and 450 with respective source/drain regions and thefirst and second electrodes, optionally with bulk contact to the basesubstrate 401, may be provided.

With regard to FIG. 5, a special illustrative embodiment of the presentdisclosure is schematically depicted. Herein, the first and secondelectrodes E1 and E2 are formed in accordance with an interleaved combpattern. This does not pose a limitation on the present disclosure andalternative implementations of the first and second electrodes E1 and E2may be provided, such as various serpentine patterns (tilted oruntilted), spiral patterns, tilted comb patterns, comb-tooth patterns,and combinations thereof.

In accordance with some illustrative embodiments of the presentdisclosure, the first electrode E1 may be coupled to a VSS supply pin(not illustrated) and the second electrode E2 may be coupled to a VDDsupply pin (not illustrated). For example, when NMOS devices are formedin the active region E, a positive potential may be applied to thesecond electrode, while a negative potential may be applied to the firstelectrode. When PMOS devices are formed in the active region E, anegative potential may be applied to the second electrode, while apositive potential may be applied to the first electrode.

The present disclosure provides, in accordance with some illustrativeembodiments, capacitor structures that may be fabricated in FEoLprocessing with small footprints. According to a close packing of thecontacts, an increased capacitance may be provided via contributionsfrom the metallization layer M1 and intermediate contact layer(s). Anincreased capacitance may be provided due to a contribution between thebulk and the SOI or FDSOI. The contributions to the capacitance maycomprise a capacitance between gate and source/drain of MOS devices(representing an SIS capacitor structure), a capacitance between bulkand FDSOI (representing a MIM capacitor structure), a capacitancebetween contacts (representing a MIM capacitor structure), and acapacitance in the metallization layer caused by the metallization grid(representing a MIM capacitor structure) and the close packing ofmetallization contact trenches.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is therefore evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Note that the use of terms, such as “first,” “second,”“third” or “fourth” to describe various processes or structures in thisspecification and in the attached claims is only used as a shorthandreference to such steps/structures and does not necessarily imply thatsuch steps/structures are performed/formed in that ordered sequence. Ofcourse, depending upon the exact claim language, an ordered sequence ofsuch processes may or may not be required. Accordingly, the protectionsought herein is as set forth in the claims below.

What is claimed:
 1. A capacitor structure, comprising: an active regionformed in a semiconductor substrate; a MOSFET device comprising sourceand drain regions formed in said active region and a gate electrodeformed above said active region, wherein said source and drain regionsare formed on opposing side of said gate electrode; and a firstelectrode and a second electrode formed in a metallization layer abovesaid MOSFET device; wherein said first electrode is electricallyconnected with said source and drain regions via respective source anddrain contacts and said second electrode is electrically connected withsaid gate electrode via a gate contact.
 2. The capacitor structure ofclaim 1, wherein said semiconductor substrate is an SOI substrate havingan active semiconductor layer formed on a buried insulating materiallayer, which is in turn formed on a base substrate, and wherein saidactive region is formed in said active semiconductor layer.
 3. Thecapacitor structure of claim 2, further comprising a bulk contactelectrically connecting said base substrate to said second electrode. 4.The capacitor structure of claim 1, further comprising an interlayerdielectric (ILD) layer formed on said MOSFET device and below saidmetallization layer, said source and drain contacts and said gatecontact extending through said ILD layer.
 5. The capacitor structure ofclaim 4, wherein said ILD layer comprises a high-k material.
 6. Thecapacitor structure of claim 1, wherein said first and second electrodesare formed in accordance with an interleaved comb pattern.
 7. Thecapacitor structure of claim 1, wherein said first electrode is coupledto a VSS supply pin and said second electrode is coupled to a VDD supplypin.
 8. A capacitor structure, comprising: an active region formed in asemiconductor substrate; a first MOSFET device comprising first sourceand drain regions formed in said active region and a first gateelectrode formed above said active region, wherein said first source anddrain regions are formed on opposing sides of said first gate electrode;at least a second MOSFET device formed in juxtaposition with said firstMOSFET device, said second MOSFET device comprising second source anddrain regions formed in said active region and a second gate electrodeformed above said active region, wherein said second source and drainregions are formed on opposing sides of said second gate electrode; anda first electrode and a second electrode formed in a metallization layerabove said first and second MOSFET devices; wherein said first electrodeis electrically connected with said first source and drain regions andsaid second source and drain regions via respective first source anddrain contacts and second source and drain contacts, and wherein saidsecond electrode is electrically connected with said first gateelectrode and said second gate electrode via respective first and secondgate contacts.
 9. The capacitor structure of claim 8, wherein saidsemiconductor substrate is an SOI substrate having an activesemiconductor layer formed on a buried insulating material layer, whichis in turn formed on a base substrate, said active region being formedin said active semiconductor layer.
 10. The capacitor structure of claim9, further comprising at least one bulk contact electrically connectingsaid base substrate to said second electrode, said bulk contactextending through said active semiconductor layer.
 11. The capacitorstructure of claim 8, further comprising an interlayer dielectric (ILD)layer formed on said first and second MOSFET devices, said contactsextending through said ILD layer.
 12. The capacitor structure of claim11, wherein said ILD layer comprises a high-k material.
 13. Thecapacitor structure of claim 8, wherein said first and second electrodesare formed in accordance with an interleaved comb pattern.
 14. Thecapacitor structure of claim 8, wherein said first electrode is coupledto a VSS supply pin and said second electrode is coupled to a VDD supplypin.
 15. A capacitor structure, comprising: an SOI substrate having anactive semiconductor layer formed on a buried insulating material layer,which is in turn formed on a base substrate; a MOSFET device comprisingsource and drain regions formed in said active semiconductor layer and agate electrode formed above said active semiconductor layer, whereinsaid source and drain regions are formed on opposing sides of said gateelectrode; and a first electrode and a second electrode formed in ametallization layer above said MOSFET device; wherein said firstelectrode is electrically connected with said source and drain regionsvia respective source and drain contacts, and said second electrode iselectrically connected with said gate electrode via a gate contact andwith said base substrate via a bulk contact extending through saidactive semiconductor layer.
 16. The capacitor structure of claim 15,wherein said first and second electrodes are formed in accordance withan interleaved comb pattern.
 17. The capacitor structure of claim 15,further comprising an interlayer dielectric (ILD) layer formed inbetween said MOSFET device and said metallization layer, said ILD layercomprising a high-k material and said contacts extending through saidILD layer.
 18. A method of forming a capacitor structure, said methodcomprising: forming an active region formed in a semiconductorsubstrate; forming a MOSFET device comprising source and drain regionsformed in said active region and a gate electrode formed above saidactive region, wherein said source and drain regions are formed onopposing sides of said gate electrode; forming an interlayer dielectric(ILD) layer above said MOSFET device; forming source and drain contactselectrically connected with said source and drain regions and forming agate contact electrically connected with said gate electrode in said ILDlayer; and forming a metallization layer on said ILD layer, saidmetallization layer comprising a first electrode and a second electrode,said first electrode being electrically connected with said source anddrain contacts and said second electrode being electrically connectedwith said gate contact.
 19. The method of claim 18, wherein saidsemiconductor substrate is an SOI substrate having an activesemiconductor layer formed on a buried insulating material layer, whichis in turn formed on a base substrate, and wherein said active region isformed in said active semiconductor layer, said method furthercomprising: exposing a surface region of said base substrate adjacent tosaid MOSFET device prior to forming said ILD layer; and forming a bulkcontact in said ILD layer, said bulk contact extending through said ILDlayer; wherein said bulk contact electrically connects said basesubstrate to said second electrode.
 20. The method of claim 18, whereinsaid semiconductor substrate is an SOI substrate having an activesemiconductor layer formed on a buried insulating material layer, whichis in turn formed on a base substrate, and wherein said active region isformed in said active semiconductor layer, said method furthercomprising: forming at least a second MOSFET device in juxtapositionwith said first MOSFET device, said second MOSFET device comprisingsecond source and drain regions formed in said active region and asecond gate electrode formed above said active region; exposing asurface region of said base substrate adjacent to at least one of saidfirst and second MOSFET devices prior to forming said ILD layer; andforming a bulk contact in said ILD layer, said bulk contact extendingthrough said ILD layer; wherein said bulk contact electrically connectssaid base substrate to said second electrode.